146 lines
4.7 KiB
C
146 lines
4.7 KiB
C
#ifndef _NAND_H
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#define _NAND_H
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#include "sys.h"
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//////////////////////////////////////////////////////////////////////////////////
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//本程序只供学习使用，未经作者许可，不得用于其它任何用途
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//ALIENTEK STM32开发板
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//NAND FLASH 驱动代码
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//正点原子@ALIENTEK
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//技术论坛:www.openedv.com
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//创建日期:2016/1/15
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//版本：V1.5
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//版权所有，盗版必究。
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//Copyright(C) 广州市星翼电子科技有限公司 2014-2024
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//All rights reserved
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//********************************************************************************
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//升级说明
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//V1.1 20160520
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//1,新增硬件ECC支持(仅在以NAND_ECC_SECTOR_SIZE大小为单位进行读写时处理)
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//2,新增NAND_Delay函数,用于等待tADL/tWHR
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//3,新增NAND_WritePageConst函数,用于搜寻坏块.
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//V1.2 20160525
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//1,去掉NAND_SEC_SIZE宏定义，由NAND_ECC_SECTOR_SIZE替代
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//2,去掉nand_dev结构体里面的secbuf指针，用不到
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//V1.3 20160907
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//1,定义NAND_TADL_DELAY宏,用于设置tADL的延迟时间,方便修改
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//V1.4 20180321
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//1,新增对H27U4G8F2E芯片的支持
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//2,修改MEMSET/MEMHOLD/MEMHIZ等延时,以支持H27U4G08F2E.
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//V1.5 20180531
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//1.增加NAND_TWHR_DELAY/NAND_TRHW_DELAY/NAND_TPROG_DELAY/NAND_TBERS_DELAY四个延时,防止出错
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//2.擦除时增加ms级别的延时，防止擦除时间不够立马进行读状态而造成出错
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//////////////////////////////////////////////////////////////////////////////////
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#define NAND_MAX_PAGE_SIZE 4096 //定义NAND FLASH的最大的PAGE大小（不包括SPARE区），默认4096字节
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#define NAND_ECC_SECTOR_SIZE 512 //执行ECC计算的单元大小，默认512字节
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//NAND FLASH操作相关延时函数
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#define NAND_TADL_DELAY 30 //tADL等待延迟,最少70ns
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#define NAND_TWHR_DELAY 25 //tWHR等待延迟,最少60ns
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#define NAND_TRHW_DELAY 35 //tRHW等待延迟,最少100ns
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#define NAND_TPROG_DELAY 200 //tPROG等待延迟,典型值200us,最大需要700us
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#define NAND_TBERS_DELAY 4 //tBERS等待延迟,典型值3.5ms,最大需要10ms
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//NAND属性结构体
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typedef struct
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{
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u16 page_totalsize; //每页总大小，main区和spare区总和
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u16 page_mainsize; //每页的main区大小
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u16 page_sparesize; //每页的spare区大小
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u8 block_pagenum; //每个块包含的页数量
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u16 plane_blocknum; //每个plane包含的块数量
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u16 block_totalnum; //总的块数量
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u16 good_blocknum; //好块数量
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u16 valid_blocknum; //有效块数量(供文件系统使用的好块数量)
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u32 id; //NAND FLASH ID
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u16 *lut; //LUT表，用作逻辑块-物理块转换
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u32 ecc_hard; //硬件计算出来的ECC值
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u32 ecc_hdbuf[NAND_MAX_PAGE_SIZE/NAND_ECC_SECTOR_SIZE];//ECC硬件计算值缓冲区
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u32 ecc_rdbuf[NAND_MAX_PAGE_SIZE/NAND_ECC_SECTOR_SIZE];//ECC读取的值缓冲区
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}nand_attriute;
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extern nand_attriute nand_dev; //nand重要参数结构体
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#define NAND_RB PDin(6) //NAND Flash的闲/忙引脚
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#define NAND_ADDRESS 0X80000000 //nand flash的访问地址,接NCE3,地址为:0X8000 0000
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#define NAND_CMD 1<<16 //发送命令
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#define NAND_ADDR 1<<17 //发送地址
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//NAND FLASH命令
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#define NAND_READID 0X90 //读ID指令
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#define NAND_FEATURE 0XEF //设置特性指令
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#define NAND_RESET 0XFF //复位NAND
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#define NAND_READSTA 0X70 //读状态
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#define NAND_AREA_A 0X00
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#define NAND_AREA_TRUE1 0X30
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#define NAND_WRITE0 0X80
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#define NAND_WRITE_TURE1 0X10
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#define NAND_ERASE0 0X60
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#define NAND_ERASE1 0XD0
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#define NAND_MOVEDATA_CMD0 0X00
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#define NAND_MOVEDATA_CMD1 0X35
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#define NAND_MOVEDATA_CMD2 0X85
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#define NAND_MOVEDATA_CMD3 0X10
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//NAND FLASH状态
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#define NSTA_READY 0X40 //nand已经准备好
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#define NSTA_ERROR 0X01 //nand错误
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#define NSTA_TIMEOUT 0X02 //超时
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#define NSTA_ECC1BITERR 0X03 //ECC 1bit错误
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#define NSTA_ECC2BITERR 0X04 //ECC 2bit以上错误
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//NAND FLASH型号和对应的ID号
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#define MT29F4G08ABADA 0XDC909556 //MT29F4G08ABADA
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#define MT29F16G08ABABA 0X48002689 //MT29F16G08ABABA
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u8 NAND_Init(void);
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u8 NAND_ModeSet(u8 mode);
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u32 NAND_ReadID(void);
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u8 NAND_ReadStatus(void);
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u8 NAND_WaitForReady(void);
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u8 NAND_Reset(void);
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u8 NAND_WaitRB(vu8 rb);
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void NAND_Delay(vu32 i);
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u8 NAND_ReadPage(u32 PageNum,u16 ColNum,u8 *pBuffer,u16 NumByteToRead);
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u8 NAND_ReadPageComp(u32 PageNum,u16 ColNum,u32 CmpVal,u16 NumByteToRead,u16 *NumByteEqual);
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u8 NAND_WritePage(u32 PageNum,u16 ColNum,u8 *pBuffer,u16 NumByteToWrite);
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u8 NAND_WritePageConst(u32 PageNum,u16 ColNum,u32 cval,u16 NumByteToWrite);
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u8 NAND_CopyPageWithoutWrite(u32 Source_PageNum,u32 Dest_PageNum);
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u8 NAND_CopyPageWithWrite(u32 Source_PageNum,u32 Dest_PageNum,u16 ColNum,u8 *pBuffer,u16 NumByteToWrite);
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u8 NAND_ReadSpare(u32 PageNum,u16 ColNum,u8 *pBuffer,u16 NumByteToRead);
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u8 NAND_WriteSpare(u32 PageNum,u16 ColNum,u8 *pBuffer,u16 NumByteToRead);
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u8 NAND_EraseBlock(u32 BlockNum);
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void NAND_EraseChip(void);
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u16 NAND_ECC_Get_OE(u8 oe,u32 eccval);
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u8 NAND_ECC_Correction(u8* data_buf,u32 eccrd,u32 ecccl);
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#endif
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